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| 2SC4992 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK-4 4 Features * High gain bandwidth product fT = 9.5 GHz typ * High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 2 1 1. Collector 2. Emitter 3. Base 4. Emitter Table 1 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 100 150 -55 to +150 Unit V V V mA mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SC4992 Table 2 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO ICBO ICEO Emitter cutoff current IEBO hFE Cob Min 15 Typ -- Max -- Unit V Test conditions IC = 10 A, IE=0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA pF VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- 1 A -------------------------------------------------------------- -- -- 1 mA -------------------------------------------------------------------------------------- -- -- 10 A -------------------------------------------------------------------------------------- DC current transfer ratio 50 120 250 -------------------------------------------------------------------------------------- Output capacitance -- 8.5 1.3 -------------------------------------------------------------------------------------- Gain bandwidth product Power gain fT PG 6.5 9.5 -- GHz -------------------------------------------------------------------------------------- 12 15 -- dB -------------------------------------------------------------------------------------- Noise figure NF -- 1.2 2.5 dB -------------------------------------------------------------------------------------- Note: Marking of 2SC4992 is "YR-". Attention: This device is very sensitive to electro static discharge. It is recommended to adop appropriate cautions when handling this transistor. 2SC4992 DC current transfer ratio vs. collector current 200 DC Current Transfer Ratio h FE VCE = 5V Collector power dissipation curve Collector Power Dissipation Pc (mW) 200 150 160 120 100 80 50 40 0 0.1 0.2 0 50 100 150 Ambient Temperature Ta (C) 200 0.5 1 2 5 10 20 Collector Current I C (mA) 50 Gain bandwidth product vs. collector current Collector Output Capacitance Cob (pF) 12 Gain Bandwidth Product f T (GHz) VCE = 5 V 10 8 6 4 2 0 1 2 5 10 20 Collector Current I C (mA) 50 1.6 Collector output capacitance vs. collector to base voltage IE = 0 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 2SC4992 Power gain vs. collector current 20 VCE = 5V f = 900 MHz Power Gain PG (dB) NF (dB) 16 4 5 Noise figure vs. collector current VCE = 5V f = 900MHz 12 3 8 Noise Figure 2 4 0 1 2 5 10 20 Collector Current I C (mA) 50 1 0 1 5 10 20 2 Collector Current I C (mA) 50 S21 parameter vs. collector current 20 VCE = 5V f = 1 GHz |S21 | S 21 Parameter 16 12 8 4 0 1 2 5 10 20 Collector Current I C (mA) 50 2SC4992 S11 parameter vs. frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -150 180 0 150 30 1 1.5 2 120 S21 parameter vs. frequency 90 Scale: 5 / div. 60 -30 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 parameter vs. frequency 90 120 S22 parameter vs. frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 2SC4992 Table 3 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 ) S11 S21 S12 S22 -------------- f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 MAG 0.766 0.677 0.642 0.632 0.623 0.626 0.638 0.646 0.656 0.669 ANG -69.4 -110.8 -136.3 -152.6 -165.0 -174.6 177.5 170.2 164.7 158.7 -------------- MAG 12.35 8.61 6.33 4.99 4.05 3.44 2.98 2.64 2.37 2.15 ANG 139.0 116.9 103.9 95.2 88.6 82.8 78.1 73.4 69.4 65.5 -------------- MAG 0.0615 0.0848 0.0942 0.0989 0.103 0.106 0.110 0.114 0.117 0.121 ANG 55.6 40.5 33.8 31.6 31.2 32.0 33.3 34.7 36.2 38.3 -------------- MAG 0.788 0.561 0.426 0.347 0.300 0.268 0.252 0.240 0.234 0.230 ANG -40.8 -62.7 -75.2 -84.1 -91.0 -97.0 -101.9 -107.1 -112.2 -117.3 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Table 4 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 ) S11 S21 S12 S22 -------------- f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 MAG 0.617 0.632 0.637 0.645 0.654 0.659 0.671 0.681 0.685 0.702 ANG -124.7 -156.1 -170.6 179.9 172.5 166.5 160.5 155.2 150.8 146.7 -------------- MAG 21.51 12.18 8.37 6.39 5.13 4.33 3.75 3.30 2.96 2.69 ANG 117.9 101.2 93.2 87.7 83.1 79.5 75.7 72.3 69.1 66.3 -------------- MAG 0.0350 0.0435 0.0507 0.0586 0.0684 0.0770 0.0875 0.0980 0.108 0.118 ANG 46.4 44.4 48.4 52.4 55.9 58.0 60.2 60.9 61.6 62.6 -------------- MAG 0.513 0.323 0.253 0.222 0.206 0.199 0.196 0.195 0.197 0.199 ANG -75.9 -103.8 -120.6 -132.7 -142.0 -149.0 -154.8 -159.5 -164.1 -168.1 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 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